| 摘要 |
In a transistor circuit a linear relationship between VBE and temperature is obtained by using high base sheet resistivity devices, such as super beta NPN transistors, or lateral PNP transistors. Alternatively, high base sheet resistivity devices are fabricated having a non-linear VBE vs. temperature relationship that is matched to the non-linear VBE vs. temperature relationship of NPN devices and/or the non-linear resistivity of diffused resistors over temperature, such that the sum or difference of the non-linear terms will exactly cancel, providing a linear voltage vs. temperature relationship for the circuit as a whole.
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