| 摘要 |
PURPOSE:To increase adhesive strength of a bonding wire by inserting a semiconductor layer between metal wiring layers of a semiconductor IC circuit having a multilayer wiring construction, thereby allowing to eliminate the absorption of semiconductor from a semiconductor substrate and to decrease the contact resistance between wirings. CONSTITUTION:In a semiconductor device having a shallow junction transistor, an SiO2 film 34 is provided on an Si substrate having a collector 31, a base 32 and an emitter 33. Holes are made on the emitter and the base, and then the first layer wiring is provided by evaporating a polycrystalline Si film 35 and an Al film 36. On the top of which a layer insulation film 37 such as an SiO2 or the like is provided, holes are made and the second layer of an Al film 39, a polycrystalline Si film 39 and an Al film 39' are evaporated. As a result, the Al wiring 36 of the first layer does not absorb the Si of the substrate due to the existence of the Si film 35, and also the Al wirings 39 and 39' of the second layer do not absorb the Si of the substrate due to the existence of the Si film 38 between the said wirings, thereby enabling to decrease the contact resistance between the first and the second layers. |
