| 摘要 |
PURPOSE:To obtain fine pattern of high accuracy by a method wherein when electrode or wirings are formed by Al film patterning, by utilizing etching solution which has water solution of choline as a principal ingredient uniform etching can be performed on it in normal temperature. CONSTITUTION:When chemical etched patterning is performed on an Al film AL which is used as electrodes and wiring materials of a semiconductor device by utilizing a photo resist mask PR, solution which has water solution of choline [HOCH2CH2N(CH3)3OH] as a principal ingredient is utilized. For example water solution of choline alone, mixture of water solution of choline and potassium hydroxide or mixture of water solution of choline and potassium hydroxide and isopropanol is utilized. By this method by uniform etching attained in normal temperature fine pattern of high accuracy is obtained. |
