| 摘要 |
PURPOSE:To make a layer to be etched so thick that lift-off method may be applied on it by a method wherein when patterning with a positive type photoresist is performed, concentration of developig solution is so varied that an angle which is formed between a substrate and a photo resist film is made to be a specified value. CONSTITUTION:A metal film 8 which comprises of two layers of chromium and chromium oxide and has reflectivity of 20% or below is formed on a glass substrate 7. Next by a positive type resist being applied in thickness of 0.4mum a resist film 9 is formed, and it is printed by close contact with a photo mask 10. Development is preformed with developing solution which is diluted by mixing with pure water to be 50% solution. By this method a resist pattern which has an angle of 80 deg. formed between the substrate and the side of the resist film is built. Next an Al- layer 11 which is 2,000Angstrom thick is applied on it, and lift off process is applied dipping in aceton, and the Al film over the resist 9 is removed. By this method an uneven evaporated metal pattern of width 0.8mum which corresponds the resist pattern can be built. |
