| 摘要 |
<p>PURPOSE:To eliminate the connection of lead wires for a semiconductor device and reduce the inductance of the lead wire by raising the electrodes of a high frequency semiconductor element and sealing the cover of a container having external lead wires connected to the raised electrodes. CONSTITUTION:Base and emitter electrodes 2 and 3 are raised with Au, Ag, etc. on a semiconductor chip 1 such as a transistor or the like. The chip 1 is fixed onto a metallized surface 6 formed on the surface of a ceramic substrate 5. An electrode 7 connected to the metallized surface 6 is provided via a through hole on the lower surface of the substrate 5. Base and emitter external lead wires 2a and 3a are provided on the outer surface of a cover 8 of recessed ceramic, and contact metals 2b, 3b connected through hole thereto are provided on the inner surface. The cover and the substrate are sealed with adhesive 9. In this manner, it eliminates the connection between the external lead wire and the electrodes so as to improve the high frequency characteristics.</p> |
