| 摘要 |
PURPOSE:To obtain pattern of high accuracy by a method wherein to perform processing by etching on an Si3N4 film formed on a semiconductor wafer, after its activation by injected oxygen through a patterned resist film formed on the Si3N4 film, it is removed to be dissolved by hydrofluoric acid solution or its family. CONSTITUTION:An Si3N4 film 12 is formed on a semiconductor substrate 11 such as Si, and a mask of a resist film 13 is formed. Next oxygen ion O16<+> is injected into the Si3N4 film through a patterned hole 13a on the resist film, and by heat treatment of the injected region in the mixed atomosphere of O2 and N2, SixOyNz14 is formed by activation. Activation may be performed by ion of Ar, He, Ne or F implanted. Next by immersion of the Si wafer into hydrofluoric acid solution or its family the region of the SixOyNz film is only selectively removed by being dissolved. By this method a hole for electrode formation is performed on Si3N4 film with high accuracy and certainty. |
