| 摘要 |
PURPOSE:To facilitate the manufacture of the MOS transistor as well as increase the overall reliability, by securing the simultaneous formation of the MOS transistors at the output part via the forming process of the charge transfer region at the pickup part. CONSTITUTION:N<->-layers 29 and 30 forming the source and the drain are formed to reach under gate electrode 44 and at the output part when the buried channel is formed by the ion injection at the pickup part. Then the silicon poly-crystal is formed into source and drain electrodes 36 and 37 to be deposited directly to layers 29 and 30 when the 1st transfer electrode 35 is formed next via the impurity-doped silicon poly-crystal. Then the heat treatment is given to form N<+>-layers 38 and 39 via the impurity diffusion from the silicon poly-crystal, and gate electrode 44 is formed on gate oxide film 32' in the forming process of the subsequent 2nd transfer electrode 43. As a result, the high-density ion injecting process to form the source and drain regions can be omitted, and accordingly the resist soiling can be avoided. |
