| 摘要 |
PURPOSE:To realize the high-speed working for the MOSFET integrated circuit, by setting gm of the gate circuit of FF at the slave part receiving the output of the master part equal to or larger than gm of the gate circuit of FF at the master part. CONSTITUTION:Master part 1 includes gate circuit G1 consisting of NAND gate 2 and OR gate 3 plus gate circuit G2 consisting of NAND gate 4 and OR gate 5 respectively. And slave part 6 includes gate circuit G5 consisting of NOR gate 7 and AND gate 8 plus gate circuit G4 consisting of NOR gate 9 and AND gate 10 each. Here gm of the gate circuit of FF at part 6 receiving the output of the gate circuit of FF at part 1 is set equal to or larger than gm of the gate circuit of FF at part 1. As a result, the high-speed working is ensured for the master-slave connecting MOSFET integrated circuit. |
