| 摘要 |
<p>A memory device (10) including a conventional redundant memory array (12). The redundant memory array (12) is used for compensating the data stored in a defective memory cell (13") of a main memory-cell group (11) located in the memory device (10). Addressing means (15) for addressing one cell in the memory-cell group accesses both the main memory-cell group (11) and the redundant memory array (12). Simultaneously, operated are both detecting means (16), which detect whether address information AI to be supplied to the addressing means (15) addressed the defective memory cell (13") or not, and switching means (17) which selects either channel of the main memory-cell group (11) or of the redundant memory array (12) according to the result of the detecting means (16). The switching means (17) is connected between a main data bus (DBm) cooperating with the main memory-cell group (11) and a redundant data bus (DBr) cooperating with the redundant memory array (12). </p> |
