| 摘要 |
PURPOSE:To simultaneously manufacture electrodes on both an obverse and a reverse sides and simplify the process, by prebaking a light-setting resist at 80- 200 deg.C. CONSTITUTION:If the prebaking temperature of a light-setting resist which is used in photolithography is heightened, the light transmissivity of the resist falls greatly. If the prebaking temperature is 80 deg.C or less, only a slight effect is produced. If the prebaking temperature is 200 deg.C or more, excessive setting reaction is caused and dissolving-away is made difficult. After resist films are coated, heat treatment is effected at 80-200 deg.C. Photomasks are then provided for both sides to perform simultaneous printing on both the sides. After that, development, after-baking, electrode evaporation coating and resist removal are effected for completion. Since electrodes are simultaneously manufactured on both the obverse and reverse sides, the process is simplified very much. |
