| 发明名称 |
HIGH POWER GALLIUM ARSENIDE SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR MADE BY ELECTRON LITHOGRAPHY |
| 摘要 |
<p>HIGH POWER GALLIUM ARSENIDE SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR MADE BY ELECTRON LITHOGRAPHY An integrated high-power gallium arsenide fieldeffect-transistor device for operation in the gigahertz range comprises a multiple-gate structure. The device, which features gate cross-under fingers, is fabricated in microminiature form by directly processing a wafer using electron-beam lithographic techniques.</p> |
| 申请公布号 |
CA1092254(A) |
申请公布日期 |
1980.12.23 |
| 申请号 |
CA19770288254 |
申请日期 |
1977.10.06 |
| 申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
DILORENZO, JAMES V.;MAHONEY, GERARD E.;MORAN, JOSEPH M. |
| 分类号 |
H01L29/80;H01L21/263;H01L21/28;H01L21/306;H01L21/338;H01L29/417;H01L29/423;H01L29/43;H01L29/812;(IPC1-7):01L29/80;01L29/56;01L29/48 |
主分类号 |
H01L29/80 |
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