| 摘要 |
PURPOSE:To prevent the unstable charging phenomenon of an insulator to make stable analysis possible, by providing previously a polycrystal semiconductor layer, where impurity is added, on the analysis surface when an ion microanalyzer is used to analyze impurity in the insulator where SiO2 is main components. CONSTITUTION:In case of analysis of impurity in the insulator, where SiO2 is main components, dependent upon an ion microanalyzer, SiO2 layer 2 is accumulated on semiconductor silicon substrate 1, and polycrystal semiconductr layer 3 where impurity such as arsenic and phosphorous is added is accumulated on the surface of the sample. Then, any of pairs of electrons and positive holes generated by ion beam irradiation is extracted positively outside the generation region. By this principle, the unstable charging phenomenon can be prevented to restrain the charged potential to several volt or less even for the potential arrangement of the ion microanalyzer, by which positive electric charge is accumulated in insulator 2, or the potential arrangement, by which negative electric charge is accumulated, by providing polycrystal semiconductor layer 3 peripherally. |
