发明名称 |
Method for the formation of a silicon oxide film |
摘要 |
Disclosed is a method for the formation of a thick silicon oxide film which is insoluble in organic solvents and free of cracks and pinholes on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate, converting the hydrogen silsesquioxane resin into preceramic silicon oxide by heating in an inert gas atmosphere, and converting the preceramic silicon oxide into silicon oxide ceramic by heating in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas.
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申请公布号 |
US5372842(A) |
申请公布日期 |
1994.12.13 |
申请号 |
US19930146358 |
申请日期 |
1993.10.29 |
申请人 |
DOW CORNING TORAY SILICONE CO., LTD |
发明人 |
MINE, KATSUTOSHI;NAKAMURA, TAKASHI;SASAKI, MOTOSHI |
分类号 |
H01L21/316;C03C17/27;C04B41/50;C04B41/87;C09D183/05;C23C18/12;H01L21/312;(IPC1-7):B05D5/12 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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