SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To eliminate leakage current in a semiconductor integrated circuit device by forming a channel stopping region around the emitter region and a base electrode region of a lateral bipolar transistor. CONSTITUTION:A base region 22 is formed by diffusing P<->-type impurity in the collector region 21 of a lateral bipolar transistor. An N<->-type impurity is diffused therein to form an emitter region 23. A channel stopping region 25 is formed around the emitter region 23 and the base electrode pickup region 24 and in contact with the junction between the region 22 and the semiconductor substrate 21. The region 25 may eliminate the leakage current due to channel occurred on the surface of the substrate 21 due to the contamination of the field insulating film 25.