| 摘要 |
PURPOSE:To prevent disconnectin of wires in a method of manufacturing multilayer wiring of a semiconductor device by suppressing formation of abruptly inclined ruggedness by employing a photoresist film as an insulating film between the layers. CONSTITUTION:A diffused layer 2 is formed on a semiconductor substrate 1, an oxide insulating film 3 and an opening 4 are formed, and a first wiring layer (Al) 5 is formed thereon. On the surface is coated a photoresist film 6 becoming the insulating film between the wiring layers. After heat treating it, a connecting opening 7 is perforated thereat. Fron gas X plasma is irradiated to harden the surface of the film 6 and modify it, and furhter heat treat it so as to alleviate the inclination of the step of the opening 7. Finally, a second wiring layer (Al)8 is coated thereon to form a wiring pattern thereon. |
