| 摘要 |
PURPOSE:To raise the accuracy of etching and the efficiency of treatment by making dry etching while contacting a wafer to be etched closly to the inside circumferential wall of a rotating chamber by means of centrifugal force so as to keep it in thermal contact with the wall. CONSTITUTION:The dry etching using CCl4 gas, etc., is made on wafers 14 placed along a side electrode 13 by contacting it closely to the electrode surface 13 by centrifugal force while keeping it in high thermal contact with the electrode surface 13 by means of rotation of the etching chamber 11 around a central electrode 12 as an axis and applying a high frequency power across the electrodes 12 and 13. In this case, the side electrode 13 is cooled by an external water or air cooling means. Thus, a highly accurate and stable dry etching can be performed without the needs for the close adhesion of the wafer 14 by using an oil, as in the conventional methods, and hence the efficiency of treatment can be raised because the oil- removing process after the etching is eliminated. |
