| 摘要 |
PURPOSE:To form a strongly adhered film at a lower temperature than the conventional methods by a procedure in which an organometallic compound represented by a specific formula is decomposed into plasmas using H, N, or Ar as a carrier gas, and then the plasmas are coated on a base plate. CONSTITUTION:A compound, e.g., tetrakisdiethyltitanium, represented by a formula (R1 and R2 are, respectively, H or group selected from 1-18C hydrocarbons, M is one or two or more of transition metals of IVa, Va and VIa groups and Al, Si, or B, and n is the valency of the transition metals), as a raw material, is supplied into an inlet 1 of a plasma CVD device by using a carrier gas, e.g., H, N, or Ar, where it is decomposed into plasmas by means of electrodes 5 and 6 and a high frequency power source 7. Then, the decomposition product is coated on the surface of an Al base plate 2. Thus, the coating can be performed at a lower temperature than the conventional chemical vapor deposition method, permitting the coating of a strongly adhered transition metal carbo-nitride film on the surface of a base material without generating a corrosive and reactive product. |
