| 摘要 |
PURPOSE:To improve the dynamic range of a charge coupled device by forming a potential barrier region between a channel and a field region to reduce a dark current. CONSTITUTION:A gate electrode 13 is formed through a gate oxide film 12' on a substrate 11, and a potential well 32' is formed in the channel region 15 directly under the electrode 13. A high impurity density layer 50 is formed around an active channel region 15 in contact with an impurity layer 14 and a channel region 15. When the impurity density of the layer 50 is increased higher in distribution than the density of the channel stopping layer 14, a potential barrier 33 is formed. The charge thermally generated in the field region is prevented from flowing into the channel due to the potential barrier, it can prevent the decrease of the dynamic range of the charge due to dark current. |
