| 摘要 |
PURPOSE:To eliminate the decrease of alpha-ray shielding function of a semiconductor device such as an MOS memory or the like using a ceramic package due to heat treatment by coating the active region of a semiconductor chip with surface oxidized high purity silicon beads to shield the alpha-rays. CONSTITUTION:A semiconductor chip 14 is secured through a low melting point glass adhesive layer 13 to the central recell of a ceramic base 10, MOS memory cell or the like is formed to be apprehended in erroneous operation due to alpha-ray irradiation on the surface of the chip 14, and an electrode leading lead wire 12 secured through a low melting point glass layer 11 at the periphery is connected through a bonding wire 15 thereto. The surface of the chip 14 is filled and coated with surface oxidized high purity silicon beads 18, and airtightly sealed with ceramic cap 17 through a low melting point glass layer 16. |
