| 摘要 |
A MOSFET constituting a flip-flop circuit and a MOSFET for control of reading and writing data out of and into a memory cell are formed on a semiconductor. The gate electrode of the first MOSFET and the gate electrode of the second MOSFET are formed by layers of different levels. The gate electrodes have an overlapped portion R. The first and second MOSFETs are arranged symmetrically with respect to a certain point P. By virtue of the above structure, the degree of integration of a static RAM is enhanced.
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