| 摘要 |
PURPOSE:To increase the driving efficiency of the memory element, by forming the driving electrode via the thin insulating film onto the function separated electrode which forms the memory region and then applying the electric field between the driving electrode and the common electrode to make the memory region double the driving region. CONSTITUTION:Common electrode 402 is evaporated on the entire back surface of Gd2(MoO4)3, which is abbreviated to GMO, single-crystal 401 featuring the ferrodielectric and ferroelastic properties. Memory electrode 403 is divided by analog memory function curves 311-313 and others to be used for the memory of each channel. Insulating thin film 405 of SiO or the like is evaporated on electrode 403. Driving electrode 406 provided on film 405 shifts divided region wall 305 of GMO element 401 along with common electrode 402 with application of the electric field. In such way, the entire region of element 401 is utilized for driving, and thus the driving efficiency is increased. The addressed read information of each channel is switched by switch circuit 306 and then applied to differential amplifier 307 to sound speaker 308. |
