发明名称 HALBLEITERSCHALTANORDNUNG ZUM LEITEN UND VERSTAERKEN VON STRAHLUNG
摘要 A semiconductor switching device for guiding and amplifying electromagnetic radiation is disclosed. An electrode pattern which defines a number of strip-shaped guiding members is provided on a layer structure analogous to that of a semiconductor laser. According to the invention the radiation guiding members have tapering juxtaposed ends in a transition area. Adjacent radiation guiding members in the transition area are situated within each other's amplification profile. The radiation guiding members are preferably separated from each other by insulation areas which do not extend to the common active layer. The invention may be used, for example, in switching radiation signals between two or more radiation paths in optical communication.
申请公布号 DE3021139(A1) 申请公布日期 1980.12.18
申请号 DE19803021139 申请日期 1980.06.04
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN 发明人 DJAN KHOE,GIOK;JOHAN MEULEMAN,LAMBERTUS;ERNESTO ROZZI,TULLIO
分类号 G02B6/12;G02B6/125;G02F1/313;G02F1/35;H01S5/00;H01S5/042;(IPC1-7):H01L31/14;G06G9/00 主分类号 G02B6/12
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