| 摘要 |
PURPOSE:To reduce source resistance or drain resistance by the method wherein a groove of the depth reaching a substrate from the surface of a source or a drain part is provided and connection to the substrate is done by the electrode formed in the groove. CONSTITUTION:P epitaxial layer 2 on p<+> substrate 1 has surface orientation (100) and forms n<+>-type source and drain layers 3 and 8. SiO2 film 9 is selectively opened, and by operating anisotropic etching from the surface of n<+> layer 3, groove 10 reaching substrate 1 is formed. Next, when source electrode 5', gate electrode 6 and drain electrode 7 are formed, electrode 5' attaches to the groove wall, and source layer 3 and substrate 1 are connected by electrode 5'. As a result, it is no longer necessary to form a p<+> diffused layer in the center of layer 3 as in the conventional method, so that no crystal defect or self-addition of an impurity occurs. Further, it is possible to reduce source resistance or drain resistance by these electrodes. |
