| 摘要 |
PURPOSE:To suppress soft error by providing a life-time killer diffusion layer at a place near a charge accumulation layer but not in contact with a depletion layer. CONSTITUTION:Life-time killer diffusion layer 2 made of Zn, Mn, Fe, etc. is formed on p-type Si substrate 1. Its depth is made about 20mum. Thin p epitaxial layer 3 is formed, while n<+>-layers 41 and 42 are provided, and a depletion layer formed by a pn-junction is prevented from coming into contact with layer 2. By this structure, since those electron-positive hole pairs produced along the trajectory of alpha-particles and remaining in layer 2 disappear by recombination, those that can reach charge accumulation layer 8 are only the minority carriers in epitaxial layer 3 and the depletion layer. Since their effect is very small, so soft error occurs. |
