| 摘要 |
PURPOSE:To permit an epitaxial layer having a desired characteristic to be highly reproducibly obtained by installing a covering body to the upper opening surface of the package containing a mixed-crystal growth material, with a gap provided betwen the covering body and the surface. CONSTITUTION:A package 2; which is provided with a covering body 9, contains Ga, and is saturated with As; is placed in a reaction tube 1, together with a foundation crystal substrate 4. The reaction tube 1 is heated by means of a heater 5, with H2 supplied from a gas inlet port 6. Then AsCl3, which is a mixed-crystal gas diluted with H2, is introduced into the reaction tube 1 to start growth. At this time, some of HCl formed by the interaction of H2 and AsCl3, which is hindered from contact with Ga by the covering body 9, is sent toward the substrate 4 without reacting. Thus, choosing the gap between the package 2 and the covering body 9 permits the reaction efficiency of HCl and Ga to be controlled, and the need for providing the second gas inlet port and controlling the amount of gas supply can be eliminated, so that the characteristic change due to the change of the amount of gas supply can be prevented. |
