| 摘要 |
PURPOSE:To improve ruggedness on a boundary face of a p-type GaAs and a p-type Ga1-xAlxAs and epitaxial layer surface condition by using GaAs of an n-type (111) face with Si as an impurity for substrate. CONSTITUTION:A p-type GaAs 12 through Zn diffusion is formed from a saturated Ga solvent 0.85 in x value of Al is formed against a GaAs substrate 11 of an n-type (111) face with Si as an impurity, and then a p-type Ga0.15Al0.85As 13 is obtained through epitaxial formation. According to this constitution, a boundary face of the layers 12 and 13 is flat and the surface condition of the epitaxial layer is by no means inferior to a vapor phase epitaxial layer. A fair crystallinity and an improved characteristic are obtainable thereby instead of using a GaAs substrate of conventional n-type (100) face. |
