| 摘要 |
PURPOSE: To realize the title thin film transistor having excellent ohmic characteristics of source.drain electrodes, at lower series resistance in source and drain regions as well as the less leakage current when the junction of source and drain regions is reversely biased. CONSTITUTION: Within the title thin film transistor usingα-Si:H thin film 2 for an active layer, the contact parts 3a, 4a of source and drain electrodes 7, 8 out of source and drain regions 3, 4 are formed of P-doped polycrystalline Si while the other parts are formed ofα-Si:H, P. At this time, the contact parts 3a, 4a made of the P-doped polycrystalline Si are formed by irradiatingα-Si:H, P with ultraviolet laser beams to perform molten recrystallization.
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