Process for the production of high purity silicon monocrystals having a low oxygen content

摘要

The invention provides a process according to which the oxygen content in crucible-drawn silicon crystals can be lowered and kept substantially constant throughout the length of the rod. This is achieved in that, after applying the seed crystal to the melt pool, the silicon rod being drawn from the melt pool is initially rotated at a speed from 3 to 6 rev/min and this rotational speed is preferably increased to higher values during the drawing process.