| 摘要 |
<p>A magnetic bubble memory comprises a large number of magnetic bubbles which propagate in a carrier layer when activated by current or by magnetic fields. Reduced access time and increased bit flow is achieved by use of a turning magnetic field to shift the bubbles longitudinally to access stations. A magnetic bubble memory comprises a layer of magnetic material (5) in which magnetic bubbles (6) are formed. Two storage registers (7,8) are formed which extend to defined areas of the carrier layer. An access contour (11) extends across the magnetic layer to incorporate the groups of data bits in the registers. Longitudinal field access is used for propagation of the bubbles by generation of a turning magnetic field by a field generator (14). Transverse access is effected by current access by current flow in conductors from a generater (15).</p> |
