Doping silicon with carrier life time extender - using lead metal or gaseous compound by high temp. diffusion

摘要

Highly pure polycrystalline or monocrystalline Si with semiconducting properties is produced by diffusing into pure Si a carrier lifetime extending substance such as Pb. The Pb is used in the form metallic Pb, PbI2, PbCl2, Pb(C2H5)4, Pb(CH3)4 or PbCH(COO)2. The Si may be in lump form or as wafers and the Pb is diffused in gaseous form, pref. during crucible-free zone melting. Used in mfr. of optoelectronic components esp. solar cells. The recombination rate of the carriers in the Si is reduced.