| 摘要 |
PURPOSE:To obtain an LED having no interfering property by stacking a layer with the same conduction type as a III-V-group semiconductor substrate, and the second and third layers with the second conduction type and different carrier densities but with the same composition on said III-V-group semiconductor substrate, and by controlling the carrier densities of the second and third layers. CONSTITUTION:An n-type layer is directly stacked on an n<+>-type III-V-group semiconductor substrate, the second and third p-type layers whose carrier densities are n2 and n3 are stacked, and the densities are kept such that n3>2.5n2. The height of the potential barrier resulted from the difference in densities becomes greater than kT, and the carriers cannot go over said barrier. Furthermore, n3<2X10<19>cm<-3> is specified, and the increase in nonlight emitting centers due to the generation of the defects in the vicinity of the boundaries between the layers is suppressed. In this constitution, the LED having excellent light emitting efficiency can be obtained. If the second and third layers are of n-type, the adjustment is made to obtain an n3< 2X10<18>cm<-3>. |
