| 摘要 |
PURPOSE:To obtain a mask with a minute pattern by a method wherein a monocrystal grown on a transparent substrate is used as a light shielding film mounted onto the substrate when electron beams are selectively irradiated onto the light shielding film, while its one portion is removed and the mask is formed. CONSTITUTION:A thin Si monocrystal layer 7 with approximate 0.5-2.0mum thickness is grown on a transparent substrate 6, such as sapphire, etc. in a gaseous phase shape, and a negative type resist-film 8 is applied on the whole surface. Electron beams 9 are irradiated drawing a pattern on a region where the pattern is to be formed, polymer bridges are generated to the film 8, and the necessary pattern is formed. The film 8 is developed, the film is used as a mask, an exposing portion of the layer 7 is removed by means of etching by employing fluoric acid, etc. the film 8 is removed, and a mask 10 with the desired pattern is formed. Thus, the number of electrons dispersion to the rear from the layer 7 when irradiating the electron beams 9 may be few, and the minute pattern can be prepared. |
