| 摘要 |
PURPOSE:To achieve effective use of widely known glass film, solid film or liquid film an ion sensitive film by electrically connecting the gate section and the ion sensitive film to the internal electrolyte containing specified ion. CONSTITUTION:The following PH sensor having an insulated gate transistor structure is used. The SiO2-layer 14 and the SiN-layer 15 are applied in sequence on the gate 11 of the MOS-type transistor in which the source S and the drain diffusion layers D12 and 12 are separately applied on the P-type silicon substrate 10 through the gate 11 while the SiN-layer 15 is partially removed. At least the portion contacting the internal electrolyte is covered with an insulating layer 16. |
