| 摘要 |
PURPOSE:To facilitate a design and manufacture by a method wherein transistors Darlington-connected are formed one substrate and resistance value can freely be set by using doped poly Si as a resistor for connection. CONSTITUTION:A base 11 and an emitter 12 of a transistor at the front stage and a base 21 and an emitter 22 of a transistor at the rear stage are made up to a P- type substrate 10. A resistor 13 by doped poly-Si is formed on a SiO2 film 4 in a shape that is connected to base layers 11, 12. The desired resistance value is obtained by adjusting length and width. According to this method, the specific resistance of the resistor can be set to arbitrary value different from the base layers. The N-type inversion of the collector layers of PNP type Darlington transistors is prevented by the complete separation of the transistors at the front and rear stages, and stable Darlington characteristics are obtained in planer type elements. |
