| 摘要 |
A field effect transistor including conventional source and drain electrodes employs, in the gate region, a layer of antibody specific to a particular antigen. An electrolyte solution such as 0.155 Normal sodium chloride atop the antibody layer provides a predetermined drain current versus drain voltage characteristic for the device. Replacement of the electrolyte solution with another electrolyte solution containing the antigen alters the charge of the protein surface layer due to the antigen-antibody reaction, thus affecting charge concentration in a semiconductor inversion layer in the transistor. The time rate of change of drain current thus provides a measure of the antigenic protein concentration in the replacement solution.
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