| 摘要 |
The specification discloses a process for growing crystals of a Group III-V material having controlled and high purity. The crystal is grown in the presence of hydrogen containing a predetermined amount of water vapor and the water vapor suppresses the concentration of silicon impurities from the reaction chamber, the associated tubing, and/or the starting materials, which are incorporated in the grown crystal. The crystal growth process may be either an epitaxial process or a bulk process. In one embodiment of the invention, the material grown is indium phosphide. In another embodiment of the invention, the process described above is used to grow a series of epitaxial layers of a Group III-V material with each layer having different predetermined impurity concentrations, to form a Gunn diode device.
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