IONIZED RADIATION SENSITIVE NEGATIVE TYPE RESIST

摘要

PURPOSE:To enhance the ionized radiation sensitivity of a resist and provide high dry etching resistance and high resolution to the resist by using a polymer contg. alpha-chloroacrylonitrile. CONSTITUTION:A resist soln. is prepared by dissolving a homopolymer of alpha- chloroacrylonitrile represented by the formula or a copolymer of alpha-chloroacrylonitrile and other monomer such as ethyl acrylate or glycidyl methacrylate in a solvent such as methyl cellosolve acetate. The soln. is coated onto a Cr mask substrate and dried by heating in an N2 atmosphere to form a resist film. Thus, an ionized radiation sensitive negative type resist of high sensitivity is obtd.