| 摘要 |
PURPOSE:To prevent a semiconductor device employing a polycrystalline silicon thin film from being damaged due to static electricity by forming a region making ohmic contact with a conductive route through a semiconductor layer and a reverse conducting type region bonded to the region on the way of the conductive route. CONSTITUTION:A p-type region 302 is formed in the n-type region 301 of a monocrystalline semiconductor substrate, an insulating film 303 is formed thereon, and a polycrystalline silicon thin film electrode 304 having a p-type impurity is mounted at the opening formed at the film 303. Then, a metallic wire 305 is connected thereto, an external lead wire terminal is connected to the one extension of the wire, and resistor and wire formed by a polycrystalline silicon thin film in the semiconductor device are connected to the other extension of the wire. |
