发明名称 DOT ETCHING SOLUTION
摘要 PURPOSE:To obtain a dot etching solution not causing environmental pollution and yelow staining on the photosensitive material processed and having superior storage stability, by mixng iodie ions (or thiourea) and thiosulfate with pH specified. CONSTITUTION:A dot etching solution contains thiosulfate and iodine ions in 1.4 mol/l or more (or thioureas in 0.6mol/l) with pH adjusted at or below 6 (preferably 5.5 or less). For example, sodium thiosulfate, 50-300g; sodium hydrogen sulfite, 5-30g; ammonium iodide, 250-600g (or thiourea, 50-100g); and water are mixed, and pH is adjusted to 5-3 to make a 1 liter dot etching solution. In addition, iodine ions may be used together with thioureas, but in this case, they are mixed in a concentration where the silver potential of the dot etching solution becomes or less than -460mV.
申请公布号 JPS55156942(A) 申请公布日期 1980.12.06
申请号 JP19790064960 申请日期 1979.05.28
申请人 KONISHIROKU PHOTO IND 发明人 MASUKAWA TOYOAKI;ISHIKAWA HISASHI;KANEKO YUTAKA
分类号 G03C5/38;G03C5/42;(IPC1-7):03C5/42 主分类号 G03C5/38
代理机构 代理人
主权项
地址