| 摘要 |
PROBLEM TO BE SOLVED: To form a p-n junction having a steep dopant profile in a gallium nitride semiconductor. SOLUTION: On a sapphire substrate 10, an n-type GaN contact layer 12, an n-type Al0.1 Ga0.9 N clad layer 13, a first GaN light guide layer 14, an In0.20 Ga.0.80 N quantum well active layer 15, and a second GaN light guide layer 16 are successively formed. On the upper surface of the second light guide layer 16, an Al0.1 Ga0.9 N diffusion suppressing layer 17 having a film thickness of 20 nm and doped with Mg as a p-type dopant and Si as an n-type dopant is formed and, on the upper surface of the layer 17, a p-type A0.1 Ga0.9 N clad layer 18 is formed. |
