| 摘要 |
PURPOSE:To obtain a semiconductor laser of stabilized laterial mode and good production yield, by introducing a loss mechanism for controlling higher mode oscillation in such a manner as not to cause deterioration to life and reliability of the semiconductor laser and also to loss of basic mode. CONSTITUTION:After completion of orderly crystal growth of n-Al0.3Ga0.7As 7, n-AlxGa1-xAs (O<X<0.1), 8 which is an activated layer, and P-Al0.3Ga0.7AS 9 on an n-GaAs substrate 6 of a stripe type semiconductor laser of double hetero structure, plural P current injection regions 2 reaching the activated layer 8 and an absorption region 3 are dispersion-formed into the shapes as shown in sections 11 and 10 using such a dielectric film as SiO2 as a mask. By forming an ohmic electrode 11 after insulating surface of this absorption region 3 with a thin dielectric film, and by preventing carrier from flowing directly into the region 3 from the current injection region 2 due to difference in impurity between the current injection region 2 and the region 3, a semiconductor laser of high reliability is manufactured. |
