Vertical transistor and method

摘要

A vertical transistor (70) comprising a first semiconductor layer (14) of a first conductive type. A gate structure (32) of a second conductive type disposed on the first semiconductor layer (14). The gate structure (32) may include a plurality of gates (38) separated by channels (40). A second semiconductor layer (50) of the first conductive type may be disposed over the gate structure (32) and in the channels (40). An arresting element (36) may be disposed between and upper surface of the gates (38) and the second semiconductor layer (50). A void (52) may be formed in the second semiconductor layer (50) over the gate (38).