VMOS FET switching device - has bipolar power transistors connected in parallel and biassed at working point below saturation

摘要

The switching device has a vertical metal-oxide-semiconductor (VMOS) FET(47) and a bipolar power transistor(45). The bipolar transistor is connected by its collector to the VMOS FET's drain and by its base to the source. A device (5') delivers a control signal to the gate of the VMOS FET in order to bias the bipolar transistor at its working point within a region up to saturation. Several such switching devices are provided and have the gates of their VMOS FETs connected together. The collector/emitter paths of the bipolar transistors are in parallel to increase the power switched.