CRYSTAL GROWING METHOD AND CRYSTAL GROWING APPARATUS

摘要

A crystal growing apparatus comprises a solid-state device (22) having a region (22a) where valence electrons are so controlled that the density of holes or electrons in the surface portion is controlled according to the environment of a solution (23) containing a polymer compound and a heat- generating device (24) disposed near the region (22a). The region (22a) is a n impurity region formed on a silicon semiconductor substrate. The heat- generating device (24) includes a Cr heating wire. A crystal growing method comprises heating a solution (23) by means of a heat-generating device (24). A crystal of a polymer compound is grown in the heated solution (23) in an electric state given to the surface of a region (22a).