| 摘要 |
PURPOSE: A contact hole formation method is provided to enhance misalignment margin and to prevent a damage of silicon substrate by using a pillar-shaped photoresist pattern. CONSTITUTION: In a method for forming a contact hole, a pillar-shaped photoresist pattern(9) is formed on a predetermined region to be form a contact hole(13). An oxide is deposited and flatten to form a flatten oxide layer(11). Then, the exposed photoresist pattern(9) is removed, thereby easily forming the contact hole(13). The photoresist pattern(9) having pillar structure is used as a direct contact to a semiconductor substrate(1), so that vertical contact profile is formed to enhance a misalignment margin. Also, using the photoresist pattern(9) having a high etching selectivity compared to the silicon substrate(1), a damage of the silicon substrate(1) is previously prevented.
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