METHOD FOR FABRICATING CAPACITOR OF FERROELECTRIC RAM

摘要

PURPOSE: A method for fabricating a capacitor of a ferroelectric RAM is provided to improve adhesive property with an electrode material by oxidizing a surface of a Ti film at an oxygen atmosphere during a short time by use of RTP. CONSTITUTION: In a method for fabricating a capacitor of a ferroelectric RAM, an interlayerfilm(23) is formed on a semiconductor substrate in which a predetermined lower structure is formed. A first adhesive layer(25) is formed on the interlayer film, and then a first RTP process is performed. A thin film(27) for a lower electrode and a dielectric film(29) are formed on the first adhesive layer. The dielectric film, the thin film and the first adhesive layer are patterned by use of a mask for a lower electrode. A capping oxidation film(31) and a second adhesive layer(33) are sequentially formed over the resultant structure, and then a second RTP process is performed. After forming an upper electrode(35) connected to a contact for the upper electrode, a third adhesive layer(37) is formed on a surface of the upper electrode and a third RTP process is performed.