MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To manufacture a semiconductor device, by adjusting the stoichiometric ratio of constituent elements of a semiconductor or locally providing H or a halogen element such as F and C in the semiconductor to locally control the energy gap of a non-monocrystaling thin film produced on a substrate. CONSTITUTION:Additives, which neutralize the unpaired links of semiconductor elements such as Si, C, Se and Sb which become the nuclei of recombination, differ in bonding force depending on the semiconductor elements. For example, C is added to Si to produce a mixture semiconductor. When a C-H or C-F bond stronger than an Si-H or Si-F bond is utilized and energy which is not sufficient for one bond but is sufficient for another bond is applied by heat or ultraviolet rays, H or halogen can be locally left in proportion to the density of the elements of the stronger bond. According to this method, the energy gap Eg of non-single crystal Si produced on a substrate can be optionally controlled or the stoichiometrical ratio of non-monocrystaling of a mixture such as SixO1-x(0.5