| 摘要 |
PURPOSE:To obtain a semiconductor device which incorporates preferable characteristics by irradiating a laser light from a sapphire substrate side to an SOS substrate to effectively reduce the defects and transition in the vicinity of the boundary between the sapphire and the monocrystalline silicon. CONSTITUTION:Since the light absorption coefficient of a sapphire is much smaller than that of a monocrystalline silicon, when a laser light is irradiated from the sapphire side, it is much absorbed to the Si-layer in the vicinity of the boundary between the sapphire and the monocrystalline silicon, which boundary portion is molten and recrystallized, so that an aluminum doping does not occur from the sapphire side to the Si to thereby reduce effectively much more defects and transitions in the boundary than the Si-layer so as to remarkably improve the crystallizability. Therefore, when an element is formed in the SOS substrate, electron mobility is accelerated to obtain a semiconductor device having preferable characteristics. |
