| 摘要 |
High quality p-n junctions are formed in silicon grown epitaxially onto a silicon substrate of one conductivity type from a melt undersaturated with silicon and containing opposite conductivity type determining impurities. Lowering the substrate into the melt causes same of the substrate dopant to enter the melt. With a substrate doping level exceeding that of the epitaxial layer that would grow in the absence of meltback, the epitaxial layer initially grows with the one conductivity type. However, as epitaxial layer thickness increases, the substrate dopant atoms in the melt are consumed and the epitaxial layer grown thereafter is of opposite conductivity type, producing a p-n junction in the epitaxial layer away from the substrate.
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