| 摘要 |
PURPOSE:To obviate the sensing of the gate part with a change in the ion concentration in the solution by forming the vapor deposition film of poly-p-xylylene (derivative) by the specific method on the gate surface of the FET. CONSTITUTION:The gate surface of the gate part SiO2 film type FET is turned organic (for example, it is methylated by being dipped in the ether solution of diazomethane), thence a film of the poly-p-xylylene (derivative) shown by formula (Ar is bivalent nonsubstituted or halogen-substituted benzonoid nucleus; n is about 5,000 or more) is formed through vapor deposition, after which it is annealed for 24hr or more at about 60-400 deg.C. |
